THE ROLE OF HYDROGEN IN THE ACTION OF FLUORINE IN SI/SIO2 STRUCTURES

被引：9

作者：

AFANAS'EV, VV ^{[1
]}

DENIJS, JMM ^{[1
]}

BALK, P ^{[1
]}

机构：

[1] DELFT UNIV TECHNOL, DELFT INST MICROELECTR & SUBMICROTECHNOL, 2600 GB DELFT, NETHERLANDS

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1995年 / 187卷

关键词：

D O I：

10.1016/0022-3093(95)00144-1

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The effect of hydrogen exposure and subsequent annealing of F-implanted oxides on the generation of donor-type Si/SiO2 interface states was studied. F appears to reduce the amount of H in the oxide, which otherwise is instrumental in producing these hydrogen-related states. This elimination of hydrogen is of catalytic nature; formation of the mobile species HF is suggested. Confinement of these F species by the gate is essential to prevent their escape from the oxide.

引用

页码：248 / 252

页数：5

共 12 条

[1] NECESSITY OF HYDROGEN FOR ACTIVATION OF IMPLANTED FLUORINE IN SI/SIO2 STRUCTURES [J].

AFANAS'EV, VV ;

DENIJS, JMM ;

BALK, P .

APPLIED PHYSICS LETTERS, 1993, 63 (21) :2949-2951

[2]

AFANAS'EV VV, 1993, ESSDERC '93 - PROCEEDINGS OF THE 23RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, P415

[3] SIMULTANEOUS ELIMINATION OF ELECTRICALLY ACTIVE DEFECTS IN SI/SIO2 STRUCTURES BY IMPLANTED FLUORINE [J].

AFANAS'EV, VV ;

DEPAS, M ;

DENIJS, JMM ;

BALK, P .

MICROELECTRONIC ENGINEERING, 1993, 22 (1-4) :93-96

[4] PASSIVATION AND DEPASSIVATION OF SILICON DANGLING BONDS AT THE SI/SIO2 INTERFACE BY ATOMIC-HYDROGEN [J].

CARTIER, E ;

STATHIS, JH ;

BUCHANAN, DA .

APPLIED PHYSICS LETTERS, 1993, 63 (11) :1510-1512

[5] RADIATION RESPONSE OF MOS CAPACITORS CONTAINING FLUORINATED OXIDES [J].

DASILVA, EF ;

NISHIOKA, Y ;

MA, TP .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1987, 34 (06) :1190-1195

[6] THE MICROSCOPIC NATURE OF DONOR-TYPE SI-SIO2 INTERFACE STATES [J].

DRUIJF, KG ;

DENIJS, JMM ;

VANDERDRIFT, E ;

AFANAS'EV, VV ;

GRANNEMAN, EHA ;

BALK, P .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1995, 187 :206-210

[7] THE EFFECTS OF WATER ON OXIDE AND INTERFACE TRAPPED CHARGE GENERATION IN THERMAL SIO2-FILMS [J].

FEIGL, FJ ;

YOUNG, DR ;

DIMARIA, DJ ;

LAI, S ;

CALISE, J .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) :5665-5682

[8] EFFECTS OF AVALANCHE INJECTION OF ELECTRONS INTO SILICON DIOXIDE - GENERATION OF FAST AND SLOW INTERFACE STATES [J].

LAI, SK ;

YOUNG, DR .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (10) :6231-6240

[9] METAL-OXIDE SEMICONDUCTOR GATE OXIDE RELIABILITY AND THE ROLE OF FLUORINE [J].

MA, TP .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1992, 10 (04) :705-712

[10] IMPROVED HOT-CARRIER RESISTANCE WITH FLUORINATED GATE OXIDES [J].

MACWILLIAMS, KP ;

HALLE, LF ;

ZIETLOW, TC .

IEEE ELECTRON DEVICE LETTERS, 1990, 11 (01) :3-5

← 1 2 →