EFFECTS OF AVALANCHE INJECTION OF ELECTRONS INTO SILICON DIOXIDE - GENERATION OF FAST AND SLOW INTERFACE STATES

[1] ELECTRON TRAPPING BY RADIATION-INDUCED CHARGE IN MOS DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (03) : 1196 - 1198

[2] ELECTRON TRAPPING IN ELECTRON-BEAM IRRADIATED SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) : 3386 - 3391

[3] NEW MODEL FOR NEGATIVE VOLTAGE INSTABILITY IN MOS DEVICES [J]. APPLIED PHYSICS LETTERS, 1975, 26 (03) : 116 - 118

[4] BREED DJ, 1974, SOLID STATE ELECTRON, V17, P1229, DOI 10.1016/0038-1101(74)90002-1

[5] DESCRIPTION OF SIO2-SI INTERFACE PROPERTIES BY MEANS OF VERY LOW FREQUENCY MOS CAPACITANCE MEASUREMENTS [J]. SURFACE SCIENCE, 1971, 28 (01) : 157 - +

[6] FREQUENCY AND TEMPERATURE TESTS FOR LATERAL NONUNIFORMITIES IN MIS CAPACITORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (10) : 1249 - 1255

[7] ELECTRON TRAPPING AND DETRAPPING CHARACTERISTICS OF ARSENIC-IMPLANTED SIO2 LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) : 1085 - 1101

[8] DERBENWICK GF, COMMUNICATION

[9] LOCATION OF POSITIVE CHARGES IN SIO2-FILMS ON SI GENERATED BY VUV PHOTONS, X-RAYS, AND HIGH-FIELD STRESSING [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 898 - 906

[10] CHARGE TRAPPING STUDIES IN SIO2 USING HIGH-CURRENT INJECTION FROM SI-RICH SIO2-FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) : 4830 - 4841

[1] ELECTRON TRAPPING BY RADIATION-INDUCED CHARGE IN MOS DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (03) : 1196 - 1198

[2] ELECTRON TRAPPING IN ELECTRON-BEAM IRRADIATED SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) : 3386 - 3391

[3] NEW MODEL FOR NEGATIVE VOLTAGE INSTABILITY IN MOS DEVICES [J]. APPLIED PHYSICS LETTERS, 1975, 26 (03) : 116 - 118

[4] BREED DJ, 1974, SOLID STATE ELECTRON, V17, P1229, DOI 10.1016/0038-1101(74)90002-1

[5] DESCRIPTION OF SIO2-SI INTERFACE PROPERTIES BY MEANS OF VERY LOW FREQUENCY MOS CAPACITANCE MEASUREMENTS [J]. SURFACE SCIENCE, 1971, 28 (01) : 157 - +

[6] FREQUENCY AND TEMPERATURE TESTS FOR LATERAL NONUNIFORMITIES IN MIS CAPACITORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (10) : 1249 - 1255

[7] ELECTRON TRAPPING AND DETRAPPING CHARACTERISTICS OF ARSENIC-IMPLANTED SIO2 LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) : 1085 - 1101

[8] DERBENWICK GF, COMMUNICATION

[9] LOCATION OF POSITIVE CHARGES IN SIO2-FILMS ON SI GENERATED BY VUV PHOTONS, X-RAYS, AND HIGH-FIELD STRESSING [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 898 - 906

[10] CHARGE TRAPPING STUDIES IN SIO2 USING HIGH-CURRENT INJECTION FROM SI-RICH SIO2-FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) : 4830 - 4841