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ANNEALING OF SUPERSATURATED COBALT IN SILICON

被引：7
作者：
SUWAKI, H
HASHIMOTO, K
NAKASHIMA, H
HASHIMOTO, K
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1986年 / 25卷 / 12期
关键词：
D O I：
10.1143/JJAP.25.1952
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1952 / 1953
页数：2
相关论文
共 4 条
[1]   ENERGY-LEVELS AND SOLUBILITY OF ELECTRICALLY ACTIVE COBALT IN SILICON STUDIED BY COMBINED HALL AND DLTS MEASUREMENTS [J].
KITAGAWA, H ;
NAKASHIMA, H ;
HASHIMOTO, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (03) :373-374
[2]   METHOD OF ANALYSIS OF A SINGLE-PEAK DLTS SPECTRUM WITH 2 OVERLAPPING DEEP-TRAP RESPONSES [J].
NAKASHIMA, H ;
MIYAGAWA, T ;
SUGITANI, S ;
HASHIMOTO, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (02) :205-208
[3]   ENERGY-LEVEL AND SOLID SOLUBILITY OF COBALT IN SILICON BY IN-DEPTH PROFILE MEASUREMENT [J].
NAKASHIMA, H ;
TOMOKAGE, H ;
KITAGAWA, H ;
HASHIMOTO, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (06) :776-777
[4]  
TOMOKAGE H, 1981, MEM FAC ENG KYUSHU U, V41, P59
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