ENERGY-LEVELS AND SOLUBILITY OF ELECTRICALLY ACTIVE COBALT IN SILICON STUDIED BY COMBINED HALL AND DLTS MEASUREMENTS

被引：15

作者：

KITAGAWA, H

NAKASHIMA, H

HASHIMOTO, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1985年 / 24卷 / 03期

关键词：

D O I：

10.1143/JJAP.24.373

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：373 / 374

页数：2

共 9 条

[1] BLAKEMORE J, 1962, SEMICONDUCTOR STATIS, P119
[2] CHANG MCP, 1974, THESIS U MASSACHUSET
[3] KIMERLING LC, 1981, I PHYS C SER, V59, P217
[4] DIFFUSION-COEFFICIENT OF COBALT IN SILICON
KITAGAWA, H
HASHIMOTO, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (01) : 173 - 174
[5] SOLID SOLUBILITY OF COBALT IN SILICON
KITAGAWA, H
HASHIMOTO, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (05) : 857 - 858
[6] ENERGY-LEVEL AND SOLID SOLUBILITY OF COBALT IN SILICON BY IN-DEPTH PROFILE MEASUREMENT
NAKASHIMA, H
TOMOKAGE, H
KITAGAWA, H
HASHIMOTO, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (06): : 776 - 777
[7] INVESTIGATIONS IN COBALT DOPED SILICON BY DLTS AND MOSSBAUER-EFFECT
SCHEIBE, E
SCHROTER, W
[J]. PHYSICA B & C, 1983, 116 (1-3): : 318 - 322
[8] TOMOKAGE H, 1981, MEM FAC ENG KYUSHU U, V41, P59
[9] TRANSITION-METALS IN SILICON
WEBER, ER
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 30 (01): : 1 - 22