DIFFUSION-COEFFICIENT OF COBALT IN SILICON

被引：19

作者：

KITAGAWA, H ^{[1
]}

HASHIMOTO, K ^{[1
]}

机构：

[1] KYUSHU UNIV,FAC ENGN,DEPT ELECT ENGN,FUKUOKA 812,JAPAN

来源：

关键词：

D O I：

10.1143/JJAP.16.173

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：173 / 174

页数：2

共 4 条

[1] BAKHADRY.MK, 1970, FIZ TVERD TELA+, V12, P144
[2] ENERGY LEVELS IN COBALT COMPENSATED SILICON
MOORE, JS
CHANG, MCP
PENCHINA, CM
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (13) : 5282 - &
[3] DEEP DONOR STATE OF COBALT IN SILICON
WONG, DC
PENCHINA, CM
[J]. APPLIED PHYSICS LETTERS, 1976, 28 (03) : 142 - 144
[4] THERMAL EMISSION RATES AND ACTIVATION-ENERGIES OF ELECTRONS AND HOLES AT COBALT CENTERS IN SILICON
YAU, LD
CHAN, WW
SAH, CT
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 14 (02): : 655 - 662