DEEP DONOR STATE OF COBALT IN SILICON

被引：4

作者：

WONG, DC ^{[1
]}

PENCHINA, CM ^{[1
]}

机构：

[1] UNIV MASSACHUSETTS,DEPT PHYS & ASTRON,AMHERST,MA 01002

来源：

关键词：

D O I：

10.1063/1.88668

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：142 / 144

页数：3

共 15 条

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[5] Milnes A., 1973, DEEP IMPURITIES SEMI
[6] ENERGY LEVELS IN COBALT COMPENSATED SILICON
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[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (13) : 5282 - &
[7] PARILLO LC, 1972, APPL PHYS LETT, V20, P104
[8] COBALT ACCEPTOR STATE IN SILICON - TEMPERATURE-DEPENDENCE OF ENERGY-LEVEL AND CAPTURE CROSS-SECTION
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MOORE, JS
[J]. PHYSICAL REVIEW B, 1974, 9 (12): : 5217 - 5221
[9] ENERGY LEVELS AND NEGATIVE PHOTOCONDUCTIVITY IN COBALT-DOPED SILICON
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[10] VANVECHTEN JA, 1974, B AM PHYS SOC, V19, P211