COBALT ACCEPTOR STATE IN SILICON - TEMPERATURE-DEPENDENCE OF ENERGY-LEVEL AND CAPTURE CROSS-SECTION

被引：21

作者：

PENCHINA, CM

MOORE, JS

机构：

[1] UNIV MASSACHUSETTS,DEPT PHYS & ASTRON,AMHERST,MA 01002

[2] STANFORD RES INST,PHYS ELECTR GRP,MENLO PK,CA 94025

来源：

PHYSICAL REVIEW B | 1974年 / 9卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.9.5217

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5217 / 5221

页数：5

共 24 条

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