MANY-BAND PSEUDOPOTENTIAL CALCULATION OF PHOTOIONIZATION OF ZINC IN SILICON

被引：5

作者：

JAROS, M

机构：

来源：

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS | 1972年 / 5卷 / 15期

关键词：

D O I：

10.1088/0022-3719/5/15/013

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1985 / &

共 12 条

[1] PHOTO-IONIZATION OF DEEP IMPURITIES IN SEMICONDUCTORS [J].

ALLEN, JW .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1969, 2 (06) :1077-&

[2] APPLICATION OF QUANTUM-DEFECT METHOD TO OPTICAL TRANSITIONS INVOLVING DEEP EFFECTIVE-MASS-LIKE IMPURITIES IN SEMICONDUCTORS [J].

BEBB, HB .

PHYSICAL REVIEW, 1969, 185 (03) :1116-&

[3] DOUBLE-ACCEPTOR BEHAVIOR OF ZINC IN SILICON [J].

CARLSON, RO .

PHYSICAL REVIEW, 1957, 108 (06) :1390-1393

[4] BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J].

COHEN, ML ;

BERGSTRESSER, TK .

PHYSICAL REVIEW, 1966, 141 (02) :789-+

[5] ELECTRONIC BAND STRUCTURE AND COVALENCY IN DIAMOND-TYPE SEMICONDUCTORS [J].

HEINE, V ;

JONES, RO .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1969, 2 (04) :719-&

[6] INFRARED SPECTRA OF GROUP-III ACCEPTORS IN SILICON [J].

HROSTOWSKI, HJ ;

KAISER, RH .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 4 (1-2) :148-153

[7] GROUND STATES AND PHOTOIONIZATION OF IRON GROUP TRANSITION METAL IMPURITIES IN SEMICONDUCTORS [J].

JAROS, M .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1971, 4 (17) :2979-&

[8]

KORNILOV BV, 1964, SOV PHYS-SOL STATE, V5, P2420

[9]

KORNILOV BV, 1963, FIZ TVERD TELA, V5, P3305

[10] ON THE PHOTOIONIZATION OF DEEP IMPURITY CENTERS IN SEMICONDUCTORS [J].

Lucovsky, G. .

SOLID STATE COMMUNICATIONS, 1965, 3 (09) :299-302

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