MODULATED MOLECULAR-BEAM EPITAXY - A SUCCESSFUL ROUTE TOWARD HIGH-QUALITY HIGHLY STRAINED HETEROSTRUCTURES

被引：14

作者：

GERARD, JM

MARZIN, JY

JUSSERAND, B

机构：

[1] Centre National d'Etudes des Télécommunications, F-92220 Bagneux

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 111卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)90972-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

InAs/GaAs highly strained short period superlattices exhibit clearly improved structural and optical properties when grown by modulated MBE at low temperature (350-degrees-C) instead of conventional MBE. This technique forces a layer by layer growth of the strained layers. Current descriptions of the growth mechanism are discussed, and an alternative model is proposed for it.

引用

页码：205 / 209

页数：5

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