GROWTH OF HIGH-PURITY CDTE SINGLE-CRYSTALS BY VERTICAL ZONE-MELTING

被引：68

作者：

TRIBOULET, R ^{[1
]}

MARFAING, Y ^{[1
]}

机构：

[1] CNRS, LAB PHYS SOLIDES, 92 MEUDON, FRANCE

来源：

关键词：

D O I：

10.1149/1.2403674

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1260 / 1265

页数：6

共 19 条

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[2] ALEKSEENKO MV, 1970, SOV PHYS SEMICOND+, V4, P349
[3] Bell R. O., 1970, Physica Status Solidi A, V1, P375, DOI 10.1002/pssa.19700010303
[4] PARTIAL PRESSURES IN CD-TE AND ZN-TE SYSTEMS
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (12) : 2014 - &
[5] Cornet A., 1970, Journal of Crystal Growth, V7, P329, DOI 10.1016/0022-0248(70)90059-X
[6] SEALED SOLID METHOD FOR ZONE MELTING DECOMPOSABLE COMPOUNDS
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (04) : 345 - 346
[7] GROWING OF CDTE SINGLE CRYSTALS BY SUBLIMATION IN CD VAPOURS
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KONAK, C
[J]. CZECHOSLOVAK JOURNAL OF PHYSICS, 1963, 13 (10) : 785 - &
[8] KYLE NR, 1971, P INT S CDTE
[9] HIGH-PURITY CDTE BY SEALED-INGOT ZONE REFINING
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HALSTED, RE
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (04) : 343 - 344
[10] MARK P, 1965, RCA REV, V26, P461