TRANSIENT PULSE RESPONSE OF IN0.2GA0.8AS/GAAS MICROCAVITY LASERS

被引:32
作者
MICHLER, P [1 ]
LOHNER, A [1 ]
RUHLE, WW [1 ]
REINER, G [1 ]
机构
[1] UNIV ULM,OPTOELEKTR ABT,D-89069 ULM,GERMANY
关键词
D O I
10.1063/1.113864
中图分类号
O59 [应用物理学];
学科分类号
摘要
We investigate the transient emission of two In0.2Ga0.8As/GaAs microcavity laser samples with one and three quantum wells at 20 K following femtosecond optical excitation. The stimulated emission time is faster when the cavity resonance is tuned to shorter wavelengths within the gain spectrum of the quantum well. A larger number of quantum wells makes the dynamical response faster also. The narrowest pulse width observed is 6.8 ps, and the shortest rise time is 1 ps.© 1995 American Institute of Physics.
引用
收藏
页码:1599 / 1601
页数:3
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