WAVELENGTH DEPENDENCE OF THE THRESHOLD IN AN INGAP-INALGAP VERTICAL-CAVITY SURFACE-EMITTING LASER

被引：13

作者：

CHOW, WW

SCHNEIDER, RP

LOTT, JA

CHOQUETTE, KD

机构：

[1] Sandia National Laboratories, Albuquerque

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 02期

关键词：

D O I：

10.1063/1.112972

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The wavelength dependence of the threshold in an InGaP-InAlGaP vertical cavity surface emitting laser is investigated using a microscopic theory of the semiconductor gain medium. Good agreement is found between experiment and theory for the minimum threshold lasing wavelength for a range of laser structures.

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页码：135 / 137

页数：3

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