ELECTRICALLY INJECTED VISIBLE (639-661 NM) VERTICAL-CAVITY SURFACE-EMITTING LASERS

被引：29

作者：

LOTT, JA

SCHNEIDER, RP

机构：

[1] Compound Semiconductor Research Laboratory, Sandia National Laboratories, Albuquerque

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 10期

关键词：

LASERS; SEMICONDUCTOR LASERS;

D O I：

10.1049/el:19930555

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first electrically injected visible InAlGaP/AlGaAs vertical cavity surface emitting lasers am reported. The devices consist of an InAlGaP optical cavity active region surrounded by AlAs/AlGaAs distributed Bragg reflectors. Pulsed room temperature lasing has been observed at wavelengths from 639 to 661 nm. At 650 nm, thresholds of 30 mA at 2.7 V were measured on test devices with a 20 mum emission diameter. Peak output power exceeds 3.3 mW.

引用

页码：830 / 832

页数：3

共 7 条

[1] PERFORMANCE OF GAIN-GUIDED SURFACE EMITTING LASERS WITH SEMICONDUCTOR DISTRIBUTED BRAGG REFLECTORS
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[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (06) : 1377 - 1385
[2] VISIBLE (660 NM) RESONANT CAVITY LIGHT-EMITTING-DIODES
LOTT, JA
SCHNEIDER, RP
VAWTER, GA
ZOLPER, JC
MALLOY, KJ
[J]. ELECTRONICS LETTERS, 1993, 29 (04) : 328 - 329
[3] LOTT JA, 1993, MAY C LAS EL CLEO BA
[4] VISIBLE (657 NM) INGAP/INALGAP STRAINED QUANTUM-WELL VERTICAL-CAVITY SURFACE-EMITTING LASER
SCHNEIDER, RP
BRYAN, RP
LOTT, JA
OLBRIGHT, GR
[J]. APPLIED PHYSICS LETTERS, 1992, 60 (15) : 1830 - 1832
[5] PHOTOLUMINESCENCE LINEWIDTHS IN METALORGANIC VAPOR-PHASE EPITAXIALLY GROWN ORDERED AND DISORDERED INALGAP ALLOYS
SCHNEIDER, RP
JONES, ED
LOTT, JA
BRYAN, RP
[J]. JOURNAL OF APPLIED PHYSICS, 1992, 72 (11) : 5397 - 5400
[6] SHORT WAVELENGTH (699 NM) ELECTRICALLY PUMPED VERTICAL-CAVITY SURFACE-EMITTING LASERS
TELL, B
LEIBENGUTH, RE
BROWNGOEBELER, KF
LIVESCU, G
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1992, 4 (11) : 1195 - 1196
[7] IEEE J QUANTUM ELECT, V27, P1332

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