SHORT WAVELENGTH (699 NM) ELECTRICALLY PUMPED VERTICAL-CAVITY SURFACE-EMITTING LASERS

被引：16

作者：

TELL, B ^{[1
]}

LEIBENGUTH, RE ^{[1
]}

BROWNGOEBELER, KF ^{[1
]}

LIVESCU, G ^{[1
]}

机构：

[1] AT&T BELL LABS,BREINIGSVILLE,PA 18031

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1992年 / 4卷 / 11期

关键词：

D O I：

10.1109/68.166939

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Room temperature lasing has been achieved in vertical-cavity surface-emitting laser structures for wavelengths as short as 699 nm under pulsed electrical excitation. The molecular beam epitaxially grown structures have p- and n-type semiconductor quarter wave mirror stacks enclosing an active region containing a short period GaAs-AlAs superlattice.

引用

页码：1195 / 1196

页数：2

共 9 条

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GEELS, RS
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[5] IN0.35GA0.65P LIGHT-EMITTING-DIODES GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY
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[6] VISIBLE (657 NM) INGAP/INALGAP STRAINED QUANTUM-WELL VERTICAL-CAVITY SURFACE-EMITTING LASER
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[7] HIGH-POWER CW VERTICAL-CAVITY TOP SURFACE-EMITTING GAAS QUANTUM-WELL LASERS
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ASOM, MT
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[8] TELL B, UNPUB
[9] SHORT WAVELENGTH (VISIBLE) GAAS QUANTUM WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY
WOODBRIDGE, K
BLOOD, P
FLETCHER, ED
HULYER, PJ
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (01) : 16 - 18

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