DEEP-RED CONTINUOUS WAVE TOP-SURFACE-EMITTING VERTICAL-CAVITY ALGAAS SUPERLATTICE LASERS

被引：44

作者：

LEE, YH ^{[1
]}

TELL, B ^{[1
]}

BROWNGOEBELER, KF ^{[1
]}

LEIBENGUTH, RE ^{[1
]}

MATTERA, VD ^{[1
]}

机构：

[1] AT&T BELL LABS,STC,BREINIGSVILLE,PA 18031

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1991年 / 3卷 / 02期

关键词：

10;

D O I：

10.1109/68.76856

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Deep-red (770 nm) top-surface-emitting vertical-cavity AlGaAs lasers are fabricated and operated continuously at room temperature. An Al0.14Ga0.86As superlattice is used for an active-gain medium. Efficient current funneling is achieved by deep proton implantation. CW threshold currents are 4.6 and 6.3 mA at 3.9 and 3.4 V bias for 10 and 15-mu-m diameter lasers, respectively. The maximum CW output power is > 1.1 mW at room temperature without heatsink.

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收藏

页码：108 / 109

页数：2

相关论文

共 11 条

[1]

Botez D., 1989, IEEE Photonics Technology Letters, V1, P205, DOI 10.1109/68.36043

[2] LOW THRESHOLD PLANARIZED VERTICAL-CAVITY SURFACE-EMITTING LASERS [J].

GEELS, RS ;

CORZINE, SW ;

SCOTT, JW ;

YOUNG, DB ;

COLDREN, LA .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (04) :234-236

[3]

JEWELL J, COMMUNICATION

[4] LOW-THRESHOLD ELECTRICALLY PUMPED VERTICAL-CAVITY SURFACE-EMITTING MICROLASERS [J].

JEWELL, JL ;

SCHERER, A ;

MCCALL, SL ;

LEE, YH ;

WALKER, S ;

HARBISON, JP ;

FLOREZ, LT .

ELECTRONICS LETTERS, 1989, 25 (17) :1123-1124

[5] ROOM-TEMPERATURE CONTINUOUS WAVE LASING CHARACTERISTICS OF A GAAS VERTICAL CAVITY SURFACE-EMITTING LASER [J].

KOYAMA, F ;

KINOSHITA, S ;

IGA, K .

APPLIED PHYSICS LETTERS, 1989, 55 (03) :221-222

[6] TOP-SURFACE-EMITTING GAAS 4-QUANTUM-WELL LASERS EMITTING AT 0.85 MU-M [J].

LEE, YH ;

TELL, B ;

BROWNGOEBELER, K ;

JEWELL, JL ;

HOVE, JV .

ELECTRONICS LETTERS, 1990, 26 (11) :710-711

[7] HIGH-EFFICIENCY (1.2MW/MA) TOP-SURFACE-EMITTING GAAS QUANTUM-WELL LASERS [J].

LEE, YH ;

TELL, B ;

BROWNGOEBELER, K ;

JEWELL, JL ;

LEIBENGUTH, RE ;

ASOM, MT ;

LIVESCU, G ;

LUTHER, L ;

MATTERA, VD .

ELECTRONICS LETTERS, 1990, 26 (16) :1308-1310

[8] CHARACTERISTICS OF TOP-SURFACE-EMITTING GAAS QUANTUM-WELL LASERS [J].

LEE, YH ;

TELL, B ;

BROWNGOEBELER, K ;

JEWELL, JL ;

BURRUS, CA ;

HOVE, JMV .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (09) :686-688

[9] ROOM-TEMPERATURE CONTINUOUS-WAVE VERTICAL-CAVITY SINGLE-QUANTUM-WELL MICROLASER DIODES [J].

LEE, YH ;

JEWELL, JL ;

SCHERER, A ;

MCCALL, SL ;

HARBISON, JP ;

FLOREZ, LT .

ELECTRONICS LETTERS, 1989, 25 (20) :1377-1378

[10] VERTICAL-CAVITY SURFACE-EMITTING INGAAS GAAS-LASERS WITH PLANAR LATERAL DEFINITION [J].

ORENSTEIN, M ;

VONLEHMEN, AC ;

CHANGHASNAIN, C ;

STOFFEL, NG ;

HARBISON, JP ;

FLOREZ, LT ;

CLAUSEN, E ;

JEWELL, JE .

APPLIED PHYSICS LETTERS, 1990, 56 (24) :2384-2386