TOP-SURFACE-EMITTING GAAS 4-QUANTUM-WELL LASERS EMITTING AT 0.85 MU-M

Room temperature CW and pulsed lasing of top-surfaceemitting, vertical-cavity, GaAs quantum-well lasers was achieved at ~845nm. The active gain medium was four 100 A thick GaAs quantum wells. The whole structure was grown by molecular beam epitaxy. Deep H+-ion implantation followed by annealing was used to control a vertical profile of resistivity for an efficient current injection at the active region. The threshold current was 2-2 mA for CW and pulsed operation using 10µm diameter lasers. Differential quantum efficiency was about 20%. Minimum threshold current density per quantum well of 360 A/cm2 was obtained. © 1990, The Institution of Electrical Engineers. All rights reserved.