USE OF IMPLANT ISOLATION FOR FABRICATION OF VERTICAL CAVITY SURFACE-EMITTING LASER-DIODES

被引：29

作者：

TAI, K

FISCHER, RJ

WANG, KW

CHU, SNG

CHO, AY

机构：

来源：

关键词：

D O I：

10.1049/el:19891102

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1644 / 1645

页数：2

共 11 条

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[7] ROOM-TEMPERATURE CONTINUOUS WAVE LASING CHARACTERISTICS OF A GAAS VERTICAL CAVITY SURFACE-EMITTING LASER
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[9] TAI K, IN PRESS APPL PHYS L
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