AMORPHOUS GERMANIUM AND SILICON (STRUCTURE ANDTRANSPORT PHENOMENA)

被引:59
作者
GRIGOROVICI, R
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D O I
10.1016/0025-5408(68)90020-2
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T [工业技术];
学科分类号
08 ;
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页码:13 / +
页数:1
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共 36 条
[11]   SEEBECK EFFECT IN SILICON [J].
GEBALLE, TH ;
HULL, GW .
PHYSICAL REVIEW, 1955, 98 (04) :940-947
[12]  
Glocker R., 1942, Z ELEKTROCHEM, V48, P327
[13]   THERMOELECTRIC POWER IN AMORPHOUS SILICON [J].
GRIGOROVICI, R ;
CROITORU, N ;
DEVENYI, A .
PHYSICA STATUS SOLIDI, 1967, 23 (02) :621-+
[14]   PHOTOCONDUCTIVITY IN AMORPHOUS GERMANIUM [J].
GRIGOROVICI, R ;
CROITORU, N ;
DEVENYI, A .
PHYSICA STATUS SOLIDI, 1967, 23 (02) :627-+
[15]   THERMOELECTRIC POWER IN AMORPHOUS GERMANIUM [J].
GRIGOROVICI, R ;
CROITORU, N ;
DEVENYI, A .
PHYSICA STATUS SOLIDI, 1966, 16 (02) :K143-+
[16]  
GRIGOROVICI R, 1966, REV ROUM PHYS, V11, P869
[17]  
GRIGOROVICI R, 1965, REV ROUM PHYS, V10, P649
[18]  
GRIGOROVICI R, 1965, REV ROUM PHYS, V10, P641
[19]  
GRIGOROVICI R, IN PRESS
[20]  
GRIGOROVICI R, 1965, P INT C SEMIC PHYS, P423