OBSERVATION OF LOCALIZED RADIATION DAMAGE IN SILICON

In this experiment 2.8-MeV protons have been implanted into single-crystal 〈111〉-oriented silicon at room temperature. Measurements of the damage created as a function of proton fluence show a linear dependence for fluences from 8.2 × 1011 to 4 × 1013 protons/cm 2. The resulting lattice defects are found to be positively charged in the presence of a high electric field. The defect introduction rate is found to be 9.1 × 10-3 net (+) defects/2.8-MeV proton. Carrier trapping effects of the damage in low to medium electric fields are negligible to within the sensitivity of the experiment. The technique for making the above measurements is explained in detail. © 1969 The American Institute of Physics.