C-V CHARACTERISTICS OF "AL-VACUUM-EVAPORATED-SIOX(1-2)-GAAS SYSTEMS

被引:7
作者
HIRAMATSU, T
GOTO, H
HIROBE, T
HIROFUJI, Y
KIMATA, M
机构
[1] Department of Electrical Engineering, School of Science and Engineering, Waseda University
关键词
D O I
10.1143/JJAP.18.853
中图分类号
O59 [应用物理学];
学科分类号
摘要
[No abstract available]
引用
收藏
页码:853 / 854
页数:2
相关论文
共 3 条
[1]   SURFACE-STATES IN GAAS TUNNEL MIS STRUCTURES [J].
HIROSE, M ;
YOKOYAMA, S ;
OSAKA, Y .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 42 (02) :483-488
[2]   ELECTRICAL CONDUCTIVITY IN EVAPORATED SILICON OXIDE FILMS [J].
JOHANSEN, IT .
JOURNAL OF APPLIED PHYSICS, 1966, 37 (02) :499-&
[3]   ANOMALOUS FREQUENCY DISPERSION OF MOS CAPACITORS FORMED ON N-TYPE GAAS BY ANODIC-OXIDATION [J].
SAWADA, T ;
HASEGAWA, H .
ELECTRONICS LETTERS, 1976, 12 (18) :471-472