INFLUENCE OF THE VALLEY SPLITTING AND LINESHAPE IN THE DENSITY OF STATES ON THE QUANTUM OSCILLATIONS OF N-TYPE (100) INVERTED SILICON MOSFET SURFACES

Quantum oscillations in the channel resistance of n‐type inverted silicon (100) surfaces are investigated in quantizing magnetic fields up to 10 T as a function of the electron concentration ns. The data obtained at various tilt angles of the samples in the magnetic field are simulated numerically for ns ≧ 1 × 1012 cm−2, leaving out of consideration the range below this electron concentration, where the influence of many‐body effects is regarded to be important. The results are in good agreement with previous findings for the magnitude of the spin and valley splittings, and confirm the theoretical predictions about the lineshapes in the density of states as a function of the energy. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA