DISTRIBUTION OF SURFACE STATE DENSITY RELATED TO DIFFUSION-INDUCED DISLOCATIONS NEAR JUNCTION FORMED BY DIFFUSION OF PHOSPHORUS IN SILICON

被引：6

作者：

NISHIDA, M

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1972年 / 11卷 / 05期

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D O I：

10.1143/JJAP.11.673

中图分类号：

O59 [应用物理学];

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页码：673 / &

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