INFRARED-ABSORPTION OF SMALL SILICON PARTICLES WITH OXIDE OVERLAYERS

被引：23

作者：

WEAVER, JH

ALEXANDE.RW

TENG, L

MANN, RA

BELL, RJ

机构：

[1] UNIV MISSOURI, GRAD CTR MAT RES, ROLLA, MO USA

[2] UNIV MISSOURI, PHYS DEPT, ROLLA, MO USA

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1973年 / 20卷 / 01期

关键词：

D O I：

10.1002/pssa.2210200132

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：321 / 329

页数：9

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