QUANTIZED ELECTRON EFFECTS IN METAL A-SI-H METAL THIN-FILM STRUCTURES

被引：15

作者：

HAJTO, J ^{[1
]}

ROSE, MJ ^{[1
]}

SNELL, AJ ^{[1
]}

OSBORNE, IS ^{[1
]}

OWEN, AE ^{[1
]}

LECOMBER, PG ^{[1
]}

机构：

[1] UNIV DUNDEE,DEPT APPL PHYS & ELECTR & MFG ENGN,DUNDEE DD1 4HN,SCOTLAND

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1991年 / 137卷

关键词：

D O I：

10.1016/S0022-3093(05)80164-4

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We present experimental results showing that metal/p+/metal amorphous silicon (a-Si:H) memory structures exhibit room temperature quantised electron transport associated with quantised resistance. The quantisation of resistance is observed at values of R = h/2ie2, where i is an integer or a half integer.

引用

页码：499 / 502

页数：4

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