FIELD-EFFECT MODULATION OF PHOTOCONDUCTANCE IN A QUASI-INTRINSIC SEMICONDUCTOR

被引：3

作者：

BOCKEMUEHL, RR

机构：

来源：

关键词：

D O I：

10.1063/1.1735532

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2255 / 2259

页数：5

共 4 条

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BOCKEMUEHL, RR .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1960, 48 (05) :875-882

[2] UNIPOLAR FIELD-EFFECT TRANSISTOR [J].

DACEY, GC ;

ROSS, IM .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1953, 41 (08) :970-979

[3] DEPLETION-LAYER PHOTOEFFECTS IN SEMICONDUCTORS [J].

GARTNER, WW .

PHYSICAL REVIEW, 1959, 116 (01) :84-87

[4] A UNIPOLAR FIELD-EFFECT TRANSISTOR [J].

SHOCKLEY, W .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11) :1365-1376