GROWTH OF LOW-RESISTIVITY N-TYPE ZNTE BY METALORGANIC VAPOR-PHASE EPITAXY

被引：57

作者：

OGAWA, H ^{[1
]}

IRFAN, GS ^{[1
]}

NAKAYAMA, H ^{[1
]}

NISHIO, M ^{[1
]}

YOSHIDA, A ^{[1
]}

机构：

[1] INST MOLEC SCI,OKAZAKI,AICHI 444,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1994年 / 33卷 / 7B期

关键词：

N-TYPE ZNTE WITH LOW RESISTIVITY; AL DOPING; MOVPE;

D O I：

10.1143/JJAP.33.L980

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Doping of ZnTe has been carried out by metalorganic vapor phase epitaxy using triethylaluminum as the dopant source. N-type ZnTe layers with a carrier concentration of (1-4) x 10(17) Cm-3 and a resistivity as low as 0.1-0.3 OMEGA . cm have been obtained. It has been indicated by the photoluminescence measurement that Al is incorporated effectively into the epitaxial layer.

引用

收藏

页码：L980 / L982

页数：3

相关论文

共 21 条

[1]

BAUTRAT JL, 1985, J CRYST GROWTH, V72, P194

[2] THE ROLE OF IMPURITIES IN REFINED ZNSE AND OTHER II-VI-SEMICONDUCTORS [J].

BHARGAVA, RN .

JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) :15-26

[3] EFFECTS OF ZN TO TE RATIO ON THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF ZNTE ON GAAS [J].

FELDMAN, RD ;

AUSTIN, RF ;

BRIDENBAUGH, PM ;

JOHNSON, AM ;

SIMPSON, WM ;

WILSON, BA ;

BONNER, CE .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (03) :1191-1195

[4] PREPARATION AND PROPERTIES OF NORMAL-TYPE ZNTE [J].

FISCHER, AG ;

CARIDES, JN ;

DRESNER, J .

SOLID STATE COMMUNICATIONS, 1964, 2 (06) :157-159

[5] HIGH-RESOLUTION DRY ETCHING OF ZINC TELLURIDE - CHARACTERIZATION OF ETCHED SURFACES BY X-RAY PHOTOELECTRON-SPECTROSCOPY, PHOTOLUMINESCENCE AND RAMAN-SCATTERING [J].

FOAD, MA ;

WATT, M ;

SMART, AP ;

TORRES, CMS ;

WILKINSON, CDW ;

KUHN, W ;

WAGNER, HP ;

BAUER, S ;

LEIDERER, H ;

GEBHARDT, W .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (9A) :A115-A122

[6] TYPE CONVERSION AND P-N JUNCTION FORMATION IN ION-IMPLANTED ZNTE [J].

HOU, SL ;

BECK, K ;

MARLEY, JA .

APPLIED PHYSICS LETTERS, 1969, 14 (05) :151-&

[7] THE MOVPE GROWTH AND DOPING OF ZNTE [J].

KUHN, W ;

WAGNER, HP ;

STANZL, H ;

WOLF, K ;

WORLE, K ;

LANKES, S ;

BETZ, J ;

WORZ, M ;

LICHTENBERGER, D ;

LEIDERER, H ;

GEBHARDT, W ;

TRIBOULET, R .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (9A) :A105-A108

[8] ELECTRICAL TRANSPORT AND PHOTOELECTRONIC PROPERTIES OF ZNTEAL CRYSTALS [J].

LARSEN, TL ;

STEVENSON, DA ;

VAROTTO, CF .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (01) :172-+

[9] EXCITATION-SPECTRA OF DONOR-ACCEPTOR PAIR PHOTOLUMINESCENCE IN ZNTE [J].

NAKASHIMA, S ;

HATTORI, T ;

YAMAGUCHI, Y .

SOLID STATE COMMUNICATIONS, 1978, 25 (02) :137-139

[10]

NAKAYAMA H, 40TH SPRING M JAP SO