PROPERTIES OF A-SI,GE-H,F ALLOYS PREPARED BY RF GLOW-DISCHARGE IN AN ULTRAHIGH-VACUUM REACTOR

被引：24

作者：

KOLODZEY, J ^{[1
]}

ALJISHI, S ^{[1
]}

SCHWARZ, R ^{[1
]}

SLOBODIN, D ^{[1
]}

WAGNER, S ^{[1
]}

机构：

[1] PRINCETON UNIV,DEPT ELECT ENGN,PRINCETON,NJ 08544

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1986年 / 4卷 / 06期

关键词：

D O I：

10.1116/1.573717

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：2499 / 2504

页数：6

共 19 条

[1] GROWTH AND STRUCTURE OF LAYERED AMORPHOUS-SEMICONDUCTORS
ABELES, B
TIEDJE, T
LIANG, KS
DECKMAN, HW
STASIEWSKI, HC
SCANLON, JC
EISENBERGER, PM
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1984, 66 (1-2) : 351 - 356
[2] SOLAR PHOTOVOLTAIC POWER-SYSTEMS - AN ELECTRIC UTILITY R-AND-D PERSPECTIVE
DEMEO, EA
TAYLOR, RW
[J]. SCIENCE, 1984, 224 (4646) : 245 - 251
[3] INTENSITY DEPENDENCE OF THE MINORITY-CARRIER DIFFUSION LENGTH IN AMORPHOUS-SILICON BASED ALLOYS
HACK, M
SHUR, M
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) : 2967 - 2971
[4] KOLODZEY J, 1985, MAY EL SOC SPRING M
[5] KUWANO Y, 1982, JPN J APPL PHYS, V24, P413
[6] STRUCTURAL, ELECTRICAL, AND OPTICAL-PROPERTIES OF A-SI1-XGEX-H AND AN INFERRED ELECTRONIC BAND-STRUCTURE
MACKENZIE, KD
EGGERT, JR
LEOPOLD, DJ
LI, YM
LIN, S
PAUL, W
[J]. PHYSICAL REVIEW B, 1985, 31 (04): : 2198 - 2212
[7] MOORE A, 1984, HYDROGENATED AMORP A, VC, P239
[8] PREPARATION OF PHOTOCONDUCTIVE A-SIGE ALLOY BY GLOW-DISCHARGE
NOZAWA, K
YAMAGUCHI, Y
HANNA, J
SHIMIZU, I
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 533 - 536
[9] ODA S, 1984, 1 INT PHOT SCI ENG C, P429
[10] PANKOVE JI, 1984, HYDROGENATED AMORP A, V21