QUANTUM CAPACITANCE OF RESONANT TUNNELING DIODES

被引：18

作者：

HU, YM

STAPLETON, S

机构：

[1] School of Engineering Science, Simon Fraser University, Burnaby

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 02期

关键词：

D O I：

10.1063/1.104961

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have developed a method for evaluating the capacitance created from charges stored in the quantum well. This capacitance is currently calculated by using the formula for a parallel-plate capacitor. We have shown that the simple formula for a parallel-plate capacitor is invalid for this estimation. Our method, which is based on the damped resonant tunneling model, predicts that the capacitance due to the charges stored in the well is about two to three orders of magnitude smaller than that previously estimated.

引用

收藏

页码：167 / 169

页数：3

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