CURRENT-VOLTAGE CHARACTERISTICS OF ALXGA1-XAS SCHOTTKY BARRIERS AND P-N-JUNCTIONS

[1] BETHE HA, 1942, MIT4312 RAD LAB REP

[2] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) : 1589 - +

[3] CASEY HC, 1979, APPL PHYS LETT, V34, P594, DOI 10.1063/1.90886

[4] CHODOROW M, 1964, FUNDAMENTALS MICROWA, P19

[5] NORMALIZED THERMIONIC-FIELD (T-F) EMISSION IN METAL-SEMICONDUCTOR (SCHOTTKY) BARRIERS [J]. SOLID-STATE ELECTRONICS, 1969, 12 (02) : 89 - &

[6] EFFECT OF SURFACE RECOMBINATION ON CURRENT IN ALXGA1-XAS HETEROJUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) : 3530 - 3542

[7] BAND READJUSTMENT EFFECT WITH APPLICATIONS TO SOLAR-CELLS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (04) : 844 - 850

[8] DARK CURRENT REDUCTION IN ALXGA1-XAS-GAAS HETEROJUNCTION DIODES [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (01) : 275 - 278

[9] THE EVOLUTION OF THE THEORY FOR THE VOLTAGE-CURRENT CHARACTERISTIC OF P-N JUNCTIONS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06): : 1076 - 1082

[10] EXPERIMENTAL STUDY OF GOLD-GALLIUM ARSENIDE SCHOTTKY BARRIERS [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3744 - &

[1] BETHE HA, 1942, MIT4312 RAD LAB REP

[2] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) : 1589 - +

[3] CASEY HC, 1979, APPL PHYS LETT, V34, P594, DOI 10.1063/1.90886

[4] CHODOROW M, 1964, FUNDAMENTALS MICROWA, P19

[5] NORMALIZED THERMIONIC-FIELD (T-F) EMISSION IN METAL-SEMICONDUCTOR (SCHOTTKY) BARRIERS [J]. SOLID-STATE ELECTRONICS, 1969, 12 (02) : 89 - &

[6] EFFECT OF SURFACE RECOMBINATION ON CURRENT IN ALXGA1-XAS HETEROJUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) : 3530 - 3542

[7] BAND READJUSTMENT EFFECT WITH APPLICATIONS TO SOLAR-CELLS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (04) : 844 - 850

[8] DARK CURRENT REDUCTION IN ALXGA1-XAS-GAAS HETEROJUNCTION DIODES [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (01) : 275 - 278

[9] THE EVOLUTION OF THE THEORY FOR THE VOLTAGE-CURRENT CHARACTERISTIC OF P-N JUNCTIONS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06): : 1076 - 1082

[10] EXPERIMENTAL STUDY OF GOLD-GALLIUM ARSENIDE SCHOTTKY BARRIERS [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3744 - &