EFFECTS OF ION-IMPLANTED ATOMS UPON CONDUCTION ELECTRON-SPIN RESONANCE (CESR) IN A SI=P SYSTEM

被引：12

作者：

MURAKAMI, K ^{[1
]}

MASUDA, K ^{[1
]}

GAMO, K ^{[1
]}

NAMBA, S ^{[1
]}

机构：

[1] OSAKA UNIV,FAC ENGN SCI,TOYONAKA,OSAKA 560,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1977年 / 30卷 / 06期

关键词：

D O I：

10.1063/1.89382

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：300 / 302

页数：3

共 7 条

[1]

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SOLID STATE COMMUNICATIONS, 1976, 18 (02) :203-205

[3] GIANT ELECTRON SPIN-RESONANCE TRANSMISSION IN CU ION IMPLANTED WITH MN [J].

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PHYSICAL REVIEW LETTERS, 1972, 29 (19) :1327-+

[4] ESR STUDIES ON DEFECTS AND AMORPHOUS PHASE IN SILICON PRODUCED BY ION-IMPLANTATION [J].

MURAKAMI, K ;

MASUDA, K ;

GAMO, K ;

NAMBA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (09) :1307-1316

[5] ELECTRON-SPIN RESONANCE OF ION-IMPLANTED SI-P SYSTEM [J].

MURAKAMI, K ;

MASUDA, K ;

NAMBA, S .

SOLID STATE COMMUNICATIONS, 1976, 18 (05) :663-666

[6]

MURAKAMI K, 1975, 4TH P INT C ION IMPL, P533

[7] RELAXATION TIMES IN MAGNETIC RESONANCE [J].

PINES, D ;

SLICHTER, CP .

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