ESR STUDIES ON DEFECTS AND AMORPHOUS PHASE IN SILICON PRODUCED BY ION-IMPLANTATION

被引：20

作者：

MURAKAMI, K ^{[1
]}

MASUDA, K ^{[1
]}

GAMO, K ^{[1
]}

NAMBA, S ^{[1
]}

机构：

[1] OSAKA UNIV,FAC ENGN SCI,DEPT ELECTR ENGN,TOYONAKA,OSAKA,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1973年 / 12卷 / 09期

关键词：

D O I：

10.1143/JJAP.12.1307

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1307 / 1316

页数：10

共 29 条

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