GROWTH OF HGCDTE EPILAYERS WITH ANY PREDESIGNED COMPOSITIONAL PROFILE BY LASER MOLECULAR-BEAM EPITAXY

被引：31

作者：

CHEUNG, JT

MADDEN, J

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 03期

关键词：

D O I：

10.1116/1.583811

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：705 / 708

页数：4

共 7 条

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[7] ELLIPSOMETRIC STUDIES OF ELECTRONIC INTERBAND-TRANSITIONS IN CDXHG1-XTE
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