HYDROGEN COMPLEXES IN HYDROGENATED SILICON

被引:19
作者
JACKSON, WB
ZHANG, SB
机构
[1] Xerox Palo Alto Research Center, Palo Alto
来源
PHYSICA B | 1991年 / 170卷 / 1-4期
关键词
D O I
10.1016/0921-4526(91)90123-V
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Experimental evidence suggests that H bonds to a fully coordinated Si network in pairs. The total energies and vibration frequencies of various possible pair configurations are calculated using a local density pseudopotential method on supercells. The H2* configuration, consisting of a bond centered H and a H located at an adjacent antibonding site, is found to be low in energy and more importantly, these H2* configurations bind together with as much as 0.4 eV/pair forming Si{111} platelet structures. Metastability can also be accounted for when the H2* dissociates creating two interstitial H atoms which diffuse to form Si dangling bond-like defects at weak bond sites. Annealing occurs when the H atoms reform complexes.
引用
收藏
页码:197 / 200
页数:4
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