ANGLE-RESOLVED-PHOTOEMISSION STUDY OF THE ELECTRONIC-STRUCTURE OF THE SI(001)C(4X2) SURFACE

A wide-terrace single-domain Si(001)c(4×2) surface has been obtained by cooling a wide-terrace single-domain Si(001)2×1 surface to 20080 K. Angle-resolved ultraviolet photoelectron spectra have been measured for the Si(001)c(4×2) surface at 200100 K and compared with those for the Si(001)2×1 surface. The electronic structure of the Si(001)c(4×2) surface appears to be explained as that expected for antiferromagnetic order of asymmetric dimers of surface Si. The electronic structure of the Si(001)2×1 surface appears to be reminiscent of the c(4×2) surface. © 1990 The American Physical Society.