INFLUENCE OF THE DESORPTION AND GROWTH TEMPERATURES ON THE CRYSTALLINE QUALITY OF MOLECULAR-BEAM EPITAXY INALAS LAYERS

The influence of molecular-beam epitaxy growth conditions, especially oxide desorption and growth temperature, on the final quality of InAlAs layers grown on (100) InP substrates, has been analyzed by conventional and high-resolution transmission electron microscopy observations. InP thermal cleaning prior growth at 500-degrees-C has been found to produce rough interfaces and extended defects which propagate up to the surface, while thermal cleaning at 530-degrees-C results in abrupt interfaces and improved epilayer structure. The increase of growth temperature up to 530-degrees-C, also improves the crystalline quality of InAlAs.