DETERMINATION OF TRACE IMPURITIES IN ORGANOMETALLIC SEMICONDUCTOR-GRADE REAGENTS AND PROCESS CHEMICALS WITH ELECTROTHERMAL VAPORIZATION INDUCTIVELY-COUPLED PLASMA-ATOMIC EMISSION-SPECTROMETRY

被引：7

作者：

ARGENTINE, MD

KRUSHEVSKA, A

BARNES, RM

机构：

来源：

JOURNAL OF ANALYTICAL ATOMIC SPECTROMETRY | 1994年 / 9卷 / 10期

关键词：

ORGANOMETALLIC COMPOUND ANALYSIS; TRIMETHYLINDIUM AND TRIMETHYLALUMINUM; DIRECT VAPOR; DECOMPOSITION; ELECTROTHERMAL VAPORIZATION INDUCTIVELY COUPLED PLASMA ATOMIC EMISSION SPECTROMETRY;

D O I：

10.1039/ja9940901121

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

Both volatile and non-volatile impurities in semiconductor-grade organometallic reagents are determined by electrothermal vaporization-inductively coupled plasma atomic emission spectrometry (ETV-ICP-AES). Solid or liquid materials are dispensed directly onto a graphite microboat, and application of an appropriate time-temperature programme separates impurities based on their volatility. Calibration methods for volatile impurities (e.g., Si, Sn, Zn in trimethylaluminium) including external calibration, exponential dilution, and direct vapour sampling provide semi-quantitative results. Determination of non-volatile impurities by ETV-ICP-AES can be reasonably performed with aqueous external standard calibration.

引用

页码：1121 / 1128

页数：8

共 26 条

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