MASTERSLICE LSI FOR SUB-NANOSECOND RANDOM LOGIC

被引:4
作者
BRAECKELMANN, W
WILHELM, W
GRAUL, J
KAISER, H
机构
[1] Siemens AG, Munich, Germany
关键词
D O I
10.1109/JSSC.1979.1051279
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper describes the design and implementation of subnanosecond gate arrays with a complexity up to 700 gates. There are three different basic arrays with either 24 or 36 cells or 24 cells plus a 128 bit RAM. Each cell has the logic power of a small MSI. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.
引用
收藏
页码:829 / 832
页数:4
相关论文
共 7 条
[1]  
BRACKELMANN W, 1977, FEB ISSCC, P108
[2]  
EBERS JJ, 1954, P IRE, V42, P1971
[3]   BIPOLAR HIGH-SPEED LOW-POWER GATES WITH DOUBLE IMPLANTED TRANSISTORS [J].
GRAUL, J ;
KAISER, H ;
WILHELM, WJ ;
RYSSEL, H .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1975, 10 (04) :201-204
[4]  
GRAUL J, 1974, 6TH INT C MICR MUN
[5]  
SCHURBA R, 1978, ELECTRONICS 1109, P130
[6]  
SCHWABE U, 1975, MAY SPRING M EL SOC
[7]  
WILHELM W, 1976 P ESCIRC TOUL