SELF-ALIGNED UMOSFETS WITH A SPECIFIC ON-RESISTANCE OF 1 M-OMEGA. CM2

被引：26

作者：

CHANG, HR

BLACK, RD

TEMPLE, VAK

TANTRAPORN, W

BALIGA, BJ

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 11期

关键词：

D O I：

10.1109/T-ED.1987.23240

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2329 / 2334

页数：6

共 10 条

[1]

CHANG HR, 1987, 45TH DEV RES C

[2]

COHEN RW, 1980, IEEE T ELECTRON DEV, V27, P340

[3]

FONASH SJ, 1985, SOLID STATE TECHNOL, V28, P201

[4]

Horiguchi S., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P761

[5] ELECTRON-MOBILITY IN INVERSION AND ACCUMULATION LAYERS ON THERMALLY OXIDIZED SILICON SURFACES [J].

SUN, SC ;

PLUMMER, JD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1497-1508

[6] MODELING OF THE ON-RESISTANCE OF LDMOS, VDMOS, AND VMOS POWER TRANSISTORS [J].

SUN, SC ;

PLUMMER, JD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (02) :356-367

[7]

Ueda D., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P638

[8]

UEDA D, 1985, IEEE T ELECTRON DEV, V32, P2, DOI 10.1109/T-ED.1985.21900

[9] THERMAL-STABILITY AND SECONDARY BREAKDOWN IN PLANAR POWER MOSFETS [J].

YOSHIDA, I ;

OKABE, T ;

KATSUEDA, M ;

OCHI, S ;

NAGATA, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (02) :395-398

[10]

1986, POWERTECHNICS MA SEP, P14

← 1 →