THIN-FILM GALLIUM-ARSENIDE SOLAR-CELLS ON TUNGSTEN-GRAPHITE SUBSTRATES

被引：19

作者：

CHU, SS

CHU, TL

YANG, HT

机构：

[1] Southern Methodist University, Dallas

来源：

APPLIED PHYSICS LETTERS | 1978年 / 32卷 / 09期

关键词：

D O I：

10.1063/1.90128

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Polycrystalling gallium arsenide films deposited on tungsten/graphite substrates by the reaction of gallium, hydrogen chloride, and arsine have been used for the fabrication of MOS-type solar cells. The deposited films were oxidized in situ with an argon-oxygen mixture and, in some cases, followed by a water-vapor treatment. Gold was used as the barrier metal, and titanium oxide was used as the antireflection coating. Large-area (6-9 cm2) solar cells with an AM1 efficiency of about 5.5% have been produced.

引用

页码：557 / 559

页数：3

共 8 条

[1]

BERNARDY RD, 1976, ELECTROCHEM SOC EXTE, V76, P648

[2]

BLAKESLEE AE, 1977, ELECTROCHEM SOC EXTE, V77, P272

[3]

CHU SI, UNPUBLISHED

[4] TITANIUM-DIOXIDE DIELECTRIC FILMS PREPARED BY VAPOR REACTION [J].