HOMO-EPITAXY OF DIACETYLENE VAPOR-DEPOSITION FILM ON AN ORIENTED LANGMUIR MONOLAYER

被引:6
作者
TOMIOKA, Y
IMAZEKI, S
机构
[1] Advanced Research Laboratory, Hitachi, Ltd. Hatoyama, Saitama
关键词
D O I
10.1016/0040-6090(92)90255-A
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Inplane-oriented polydiacetylene thin films are prepared by vapor deposition of a urethane-substituted diacetylene monomer on a highly oriented polydiacetylene Langmuir monolayer. Structural and morphological investigations of the overgrown polydiacetylene thin film are carried out using polarized absorption spectroscopy, X-ray diffraction, and optical and electron microscopy. The pi-conjugated backbone chains of the overgrown polydiacetylene thin film are aligned in the same direction as those of the underlying oriented polydiacetylene monolayer, i.e. uniaxial-oriented overgrowth "epitaxy". Two dimensional lattice matching is confirmed in the contact face. Moreover, there is evidence of uniaxially oriented overgrowth along the linear textile structures such as line defects, which are contained in the underlying uniaxially oriented Langmuir monolayer.
引用
收藏
页码:352 / 355
页数:4
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