RECALCULATION OF IRVIN RESISTIVITY CURVES FOR DIFFUSED LAYERS IN SILICON USING UPDATED BULK RESISTIVITY DATA

A basic subset of Irvin's average-resistivity curves for Gaussian and complementary error function profiles is recalculated using the updated resistivity-concentration data available for boron- and phosphorus-doped bulk silicon. The calculations are made under the same physical modeling as originally assumed by Irvin. Differences from the original curves are in the direction of lower resistivity for a given surface and background dopant concentration, and are comparable with those reported for bulk silicon.