COMPOSITION DEPENDENCE OF AG PHOTODOPING INTO AMORPHOUS GE-S FILMS

被引:23
作者
KAWAGUCHI, T
MARUNO, S
机构
[1] Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Showa-ku
关键词
D O I
10.1063/1.351116
中图分类号
O59 [应用物理学];
学科分类号
摘要
Photodoping kinetic studies of thin sample of Ag/GexS100-x (21 less-than-or-equal-to x less-than-or-equal-to 45) were made through optical transmission measurements. The initial photodoping rate increases with increasing S content, whereas the total amount of dissolved Ag shows a maximum around the stoichiometric composition GeS2. The results are similar to those of the Ag/Ge-Se system but different from the Ag/As-S system. The composition dependencies are qualitatively explained by the structure of Ge-S bulk glass and the glass-forming ability of Ag-Ge-S bulk glass. In this study it was also found that aging effect is considerable within several hours after sample preparation and a reciprocity law holds between the initial rate and illumination power.
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页码:2195 / 2201
页数:7
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