PHOTODISSOLUTION OF SILVER IN AMORPHOUS AS2S3 FILMS

被引:50
作者
JANAI, M
机构
关键词
D O I
10.1103/PhysRevLett.47.726
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:726 / 729
页数:4
相关论文
共 18 条
[1]  
ANDREICH.RE, 1966, FIZ TVERD TELA+, V8, P1546
[2]   DRY-ETCHED INORGANIC RESIST [J].
CHANG, MS ;
CHEN, JT .
APPLIED PHYSICS LETTERS, 1978, 33 (10) :892-895
[3]  
DENEUFVILLE JP, 1974, AMORPHOUS LIQUID SEM, P1351
[4]   KINETICS OF PHOTODISSOLUTION OF SILVER IN AMORPHOUS AS2S3 FILMS [J].
GOLDSCHMIDT, D ;
BERNSTEIN, T ;
RUDMAN, PS .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 41 (01) :283-287
[5]   KINETICS OF PHOTO-DISSOLUTION OF AG IN AMORPHOUS AS2S3 FILMS [J].
GOLDSCHMIDT, D ;
RUDMAN, PS .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1976, 22 (02) :229-243
[6]  
GOLDSCHMIDT D, 1974, THESIS TECHNION ISRA
[7]  
INOUE E, 1974, J JAPAN SOC APPL P S, V43, P101
[8]   PHOTO-ENHANCED DIFFUSION OF AG IN AMORPHOUS GE2S3 FILMS [J].
ISHIKAWA, R .
SOLID STATE COMMUNICATIONS, 1979, 30 (02) :99-102
[9]   VALENCE-ALTERNATION MODEL FOR LOCALIZED GAP STATES IN LONE-PAIR SEMICONDUCTORS [J].
KASTNER, M ;
ADLER, D ;
FRITZSCHE, H .
PHYSICAL REVIEW LETTERS, 1976, 37 (22) :1504-1507
[10]   SILVER-HALIDE CHALCOGENIDE GLASS INORGANIC RESISTS FOR X-RAY-LITHOGRAPHY [J].
KOLWICZ, KD ;
CHANG, MS .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (01) :135-138