HETEROEPITAXIAL GROWTH OF BORON MONOPHOSPHIDE ON SILICON SUBSTRATE USING B2H6-PH3-H2 SYSTEM

被引：43

作者：

TAKIGAWA, M ^{[1
]}

HIRAYAMA, M ^{[1
]}

SHOHNO, K ^{[1
]}

机构：

[1] SOPHIA UNIV,DEPT ELECTR,CHIYODA,TOKYO,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1974年 / 13卷 / 03期

关键词：

D O I：

10.1143/JJAP.13.411

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：411 / 416

页数：6

相关论文

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[2] CRYSTALS AND EPITAXIAL LAYERS OF BORON PHOSPHIDE
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CHU, SC
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (01) : 420 - &
[3] KINOSHITA T, 1970, OYO BUTURI, V39, P788
[4] HETEROEPITAXIAL GROWTH OF LOWER BORON PHOSPHIDE ON SILICON SUBSTRATE USING PH3-B2H6-H2 SYSTEM
TAKIGAWA, M
HIRAYAMA, M
SHOHNO, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (10) : 1504 - 1509
[5] WANG CC, 1964, RCA REV, V25, P159
[6] THE PREPARATION AND PROPERTIES OF BORON PHOSPHIDES AND ARSENIDES
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[J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1960, 82 (06) : 1330 - 1332
[7] [No title captured]