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HETEROEPITAXIAL GROWTH OF BORON MONOPHOSPHIDE ON SILICON SUBSTRATE USING B2H6-PH3-H2 SYSTEM
被引:43
作者
:
TAKIGAWA, M
论文数:
0
引用数:
0
h-index:
0
机构:
SOPHIA UNIV,DEPT ELECTR,CHIYODA,TOKYO,JAPAN
SOPHIA UNIV,DEPT ELECTR,CHIYODA,TOKYO,JAPAN
TAKIGAWA, M
[
1
]
HIRAYAMA, M
论文数:
0
引用数:
0
h-index:
0
机构:
SOPHIA UNIV,DEPT ELECTR,CHIYODA,TOKYO,JAPAN
SOPHIA UNIV,DEPT ELECTR,CHIYODA,TOKYO,JAPAN
HIRAYAMA, M
[
1
]
SHOHNO, K
论文数:
0
引用数:
0
h-index:
0
机构:
SOPHIA UNIV,DEPT ELECTR,CHIYODA,TOKYO,JAPAN
SOPHIA UNIV,DEPT ELECTR,CHIYODA,TOKYO,JAPAN
SHOHNO, K
[
1
]
机构
:
[1]
SOPHIA UNIV,DEPT ELECTR,CHIYODA,TOKYO,JAPAN
来源
:
JAPANESE JOURNAL OF APPLIED PHYSICS
|
1974年
/ 13卷
/ 03期
关键词
:
D O I
:
10.1143/JJAP.13.411
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:411 / 416
页数:6
相关论文
共 7 条
[1]
OPTICAL ABSORPTION ELECTROLUMINESCENCE + BAND GAP OF BP
ARCHER, RJ
论文数:
0
引用数:
0
h-index:
0
ARCHER, RJ
LOEBNER, EE
论文数:
0
引用数:
0
h-index:
0
LOEBNER, EE
KOYAMA, RY
论文数:
0
引用数:
0
h-index:
0
KOYAMA, RY
LUCAS, RC
论文数:
0
引用数:
0
h-index:
0
LUCAS, RC
[J].
PHYSICAL REVIEW LETTERS,
1964,
12
(19)
: 538
-
&
[2]
CRYSTALS AND EPITAXIAL LAYERS OF BORON PHOSPHIDE
CHU, TL
论文数:
0
引用数:
0
h-index:
0
CHU, TL
JACKSON, JM
论文数:
0
引用数:
0
h-index:
0
JACKSON, JM
HYSLOP, AE
论文数:
0
引用数:
0
h-index:
0
HYSLOP, AE
CHU, SC
论文数:
0
引用数:
0
h-index:
0
CHU, SC
[J].
JOURNAL OF APPLIED PHYSICS,
1971,
42
(01)
: 420
-
&
[3]
KINOSHITA T, 1970, OYO BUTURI, V39, P788
[4]
HETEROEPITAXIAL GROWTH OF LOWER BORON PHOSPHIDE ON SILICON SUBSTRATE USING PH3-B2H6-H2 SYSTEM
TAKIGAWA, M
论文数:
0
引用数:
0
h-index:
0
机构:
SOPHIA UNIV,DEPT ELECTR,CHIYODA,TOKYO,JAPAN
SOPHIA UNIV,DEPT ELECTR,CHIYODA,TOKYO,JAPAN
TAKIGAWA, M
HIRAYAMA, M
论文数:
0
引用数:
0
h-index:
0
机构:
SOPHIA UNIV,DEPT ELECTR,CHIYODA,TOKYO,JAPAN
SOPHIA UNIV,DEPT ELECTR,CHIYODA,TOKYO,JAPAN
HIRAYAMA, M
SHOHNO, K
论文数:
0
引用数:
0
h-index:
0
机构:
SOPHIA UNIV,DEPT ELECTR,CHIYODA,TOKYO,JAPAN
SOPHIA UNIV,DEPT ELECTR,CHIYODA,TOKYO,JAPAN
SHOHNO, K
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1973,
12
(10)
: 1504
-
1509
[5]
WANG CC, 1964, RCA REV, V25, P159
[6]
THE PREPARATION AND PROPERTIES OF BORON PHOSPHIDES AND ARSENIDES
WILLIAMS, FV
论文数:
0
引用数:
0
h-index:
0
WILLIAMS, FV
RUEHRWEIN, RA
论文数:
0
引用数:
0
h-index:
0
RUEHRWEIN, RA
[J].
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,
1960,
82
(06)
: 1330
-
1332
[7]
[No title captured]
←
1
→
共 7 条
[1]
OPTICAL ABSORPTION ELECTROLUMINESCENCE + BAND GAP OF BP
ARCHER, RJ
论文数:
0
引用数:
0
h-index:
0
ARCHER, RJ
LOEBNER, EE
论文数:
0
引用数:
0
h-index:
0
LOEBNER, EE
KOYAMA, RY
论文数:
0
引用数:
0
h-index:
0
KOYAMA, RY
LUCAS, RC
论文数:
0
引用数:
0
h-index:
0
LUCAS, RC
[J].
PHYSICAL REVIEW LETTERS,
1964,
12
(19)
: 538
-
&
[2]
CRYSTALS AND EPITAXIAL LAYERS OF BORON PHOSPHIDE
CHU, TL
论文数:
0
引用数:
0
h-index:
0
CHU, TL
JACKSON, JM
论文数:
0
引用数:
0
h-index:
0
JACKSON, JM
HYSLOP, AE
论文数:
0
引用数:
0
h-index:
0
HYSLOP, AE
CHU, SC
论文数:
0
引用数:
0
h-index:
0
CHU, SC
[J].
JOURNAL OF APPLIED PHYSICS,
1971,
42
(01)
: 420
-
&
[3]
KINOSHITA T, 1970, OYO BUTURI, V39, P788
[4]
HETEROEPITAXIAL GROWTH OF LOWER BORON PHOSPHIDE ON SILICON SUBSTRATE USING PH3-B2H6-H2 SYSTEM
TAKIGAWA, M
论文数:
0
引用数:
0
h-index:
0
机构:
SOPHIA UNIV,DEPT ELECTR,CHIYODA,TOKYO,JAPAN
SOPHIA UNIV,DEPT ELECTR,CHIYODA,TOKYO,JAPAN
TAKIGAWA, M
HIRAYAMA, M
论文数:
0
引用数:
0
h-index:
0
机构:
SOPHIA UNIV,DEPT ELECTR,CHIYODA,TOKYO,JAPAN
SOPHIA UNIV,DEPT ELECTR,CHIYODA,TOKYO,JAPAN
HIRAYAMA, M
SHOHNO, K
论文数:
0
引用数:
0
h-index:
0
机构:
SOPHIA UNIV,DEPT ELECTR,CHIYODA,TOKYO,JAPAN
SOPHIA UNIV,DEPT ELECTR,CHIYODA,TOKYO,JAPAN
SHOHNO, K
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1973,
12
(10)
: 1504
-
1509
[5]
WANG CC, 1964, RCA REV, V25, P159
[6]
THE PREPARATION AND PROPERTIES OF BORON PHOSPHIDES AND ARSENIDES
WILLIAMS, FV
论文数:
0
引用数:
0
h-index:
0
WILLIAMS, FV
RUEHRWEIN, RA
论文数:
0
引用数:
0
h-index:
0
RUEHRWEIN, RA
[J].
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,
1960,
82
(06)
: 1330
-
1332
[7]
[No title captured]
←
1
→