X1C CONDUCTION BAND MINIMUM IN HIGH PURITY EPITAXIAL N-TYPE GAAS

[1] OPTICAL ABSORPTION DUE TO INTER-CONDUCTION-MINIMUM TRANSITIONS IN GALLIUM ARSENIDE [J]. PHYSICAL REVIEW, 1968, 173 (03): : 762 - &

[2] CHAMBERLAIN TM, 1969, SOLID STATE COMMUN, V7, P1275

[3] Connell G. A. N., 1969, High Temperatures - High Pressures, V1, P77

[4] HIGH-FIELD TRANSPORT IN N-TYPE GAAS [J]. PHYSICAL REVIEW, 1968, 166 (03): : 797 - +

[5] DOESDEBYE JAW, 1969, PHILIPS RES REPTS, V24, P210

[6] ENRENREICH H, 1960, PHYS REV, V120, P1951

[7] FAWCETT W, TO BE PUBLISHED

[8] A METHOD FOR ESTIMATING LOCATION OF ENERGY MINIMA NEAR BRILLOUIN ZONE BOUNDARY AND ITS APPLICATION TO GALLIUM ARSENIDE [J]. PHYSICS LETTERS A, 1969, A 29 (11) : 716 - &

[9] EFFECTS OF HIGH PRESSURE UNIAXIAL STRESS AND TEMPERATURE ON ELECTRICAL RESISTIVITY OF N-GAAS [J]. PHYSICAL REVIEW, 1967, 155 (03): : 786 - &

[10] KING G, 1966, SOLID ST ELECTRON, V9, P601

[1] OPTICAL ABSORPTION DUE TO INTER-CONDUCTION-MINIMUM TRANSITIONS IN GALLIUM ARSENIDE [J]. PHYSICAL REVIEW, 1968, 173 (03): : 762 - &

[2] CHAMBERLAIN TM, 1969, SOLID STATE COMMUN, V7, P1275

[3] Connell G. A. N., 1969, High Temperatures - High Pressures, V1, P77

[4] HIGH-FIELD TRANSPORT IN N-TYPE GAAS [J]. PHYSICAL REVIEW, 1968, 166 (03): : 797 - +

[5] DOESDEBYE JAW, 1969, PHILIPS RES REPTS, V24, P210

[6] ENRENREICH H, 1960, PHYS REV, V120, P1951

[7] FAWCETT W, TO BE PUBLISHED

[8] A METHOD FOR ESTIMATING LOCATION OF ENERGY MINIMA NEAR BRILLOUIN ZONE BOUNDARY AND ITS APPLICATION TO GALLIUM ARSENIDE [J]. PHYSICS LETTERS A, 1969, A 29 (11) : 716 - &

[9] EFFECTS OF HIGH PRESSURE UNIAXIAL STRESS AND TEMPERATURE ON ELECTRICAL RESISTIVITY OF N-GAAS [J]. PHYSICAL REVIEW, 1967, 155 (03): : 786 - &

[10] KING G, 1966, SOLID ST ELECTRON, V9, P601