GROWTH AND DIFFUSION OF ABRUPT ZINC PROFILES IN GALLIUM-ARSENIDE AND HETEROJUNCTION BIPOLAR-TRANSISTOR STRUCTURES GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY

被引：86

作者：

ENQUIST, P ^{[1
]}

HUTCHBY, JA ^{[1
]}

DELYON, TJ ^{[1
]}

机构：

[1] DUKE UNIV, DEPT ELECT ENGN, DURHAM, NC 27706 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 09期

关键词：

D O I：

10.1063/1.340143

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4485 / 4493

页数：9

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