LEC GROWTH OF INGAAS BULK CRYSTAL FED WITH A GAAS SOURCE

In(x)Ga(1-x)As (x = 0.055 +/- 0.004) bulk single crystals were grown by LEC while being fed with a GaAs source. To control the diameter and composition, a new crucible consisting of two melt reservoirs was used. The InGaAs crystal was grown in one melt reservoir and the source material was immersed in another reservoir. We confirmed that a homogeneous crystal with larger diameter than that of the seed can be obtained by growing at a constant temperature while dissolving sufficient GaAs source in the melt solution.