PHOTOLUMINESCENCE CHARACTERIZATION OF ALGAN-GAN PSEUDOMORPHIC QUANTUM-WELLS AND CALCULATION OF STRAIN INDUCED BANDGAP SHIFTS

被引：18

作者：

KRISHNANKUTTY, S ^{[1
]}

KOLBAS, RM ^{[1
]}

KHAN, MA ^{[1
]}

KUZNIA, JN ^{[1
]}

VANHOVE, JM ^{[1
]}

OLSON, DT ^{[1
]}

机构：

[1] APA OPT INC,BLAINE,MN 55434

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1992年 / 21卷 / 06期

关键词：

PHOTOLUMINESCENCE; PSEUDOMORPHIC; STRAIN; QUANTUM CONFINEMENT; WURTZITE CRYSTAL;

D O I：

10.1007/BF02655428

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The low temperature (77 K) photoluminescence characteristics of AlxGa1-xN-GaN strained layer quantum wells with different x values grown by metalorganic chemical vapor deposition (MOCVD) were investigated. The photoluminescence spectra were useful in analyzing both quantum confinement effects and strain induced energy shifts. The strain induced shifts were found to be a strong function of aluminum composition x. A model was developed to calculate the strain induced bandgap shifts at k = 0. The values predicted by this model which took into account the wurtzite crystal structure of the material system, were in good agreement with (i.e. within 2 meV of) the experimentally measured shifts.

引用

页码：609 / 612

页数：4

共 11 条

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