MICROCRYSTALLINE STRUCTURE IN GLOW-DISCHARGE-PRODUCED SILICON FILMS

被引：7

作者：

NAGATA, Y ^{[1
]}

KUNIOKA, A ^{[1
]}

YAMAZAKI, S ^{[1
]}

机构：

[1] SEMICOND ENERGY LAB,SETAGAYA KU,TOKYO 157,JAPAN

来源：

关键词：

D O I：

10.1063/1.92279

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：142 / 143

页数：2

共 6 条

[1] AMORPHOUS SILICON SOLAR-CELL
CARLSON, DE
WRONSKI, CR
[J]. APPLIED PHYSICS LETTERS, 1976, 28 (11) : 671 - 673
[2] AMORPHOUS SILICON SOLAR-CELLS
CARLSON, DE
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) : 449 - 453
[3] ELECTRICAL AND OPTICAL-PROPERTIES OF AMORPHOUS SI-F-H ALLOYS
MADAN, A
OVSHINSKY, SR
BENN, E
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1979, 40 (04): : 259 - 277
[4] ELECTRICAL AND STRUCTURAL-PROPERTIES OF PHOSPHOROUS-DOPED GLOW-DISCHARGE SI-F-H AND SI-H FILMS
MATSUDA, A
YAMASAKI, S
NAKAGAWA, K
OKUSHI, H
TANAKA, K
IIZIMA, S
MATSUMURA, M
YAMAMOTO, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (06) : L305 - L308
[5] SUBSTITUTIONAL DOPING OF AMORPHOUS SILICON
SPEAR, WE
LECOMBER, PG
[J]. SOLID STATE COMMUNICATIONS, 1975, 17 (09) : 1193 - 1196
[6] ELECTRONIC PROPERTIES OF SUBSTITUTED DOPED AMORPHOUS SI AND GE
SPEAR, WE
LECOMBER, PG
[J]. PHILOSOPHICAL MAGAZINE, 1976, 33 (06): : 935 - 949