SEPARATELY CONTACTED ELECTRON-HOLE DOUBLE-LAYER IN A GAAS/ALXGA1-XAS HETEROSTRUCTURE

被引：37

作者：

KANE, BE

EISENSTEIN, JP

WEGSCHEIDER, W

PFEIFFER, LN

WEST, KW

机构：

[1] AT and T Bell Laboratories, Murray Hill

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 25期

关键词：

D O I：

10.1063/1.112432

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We describe a method for creating closely spaced parallel two-dimensional electron and hole gases confined in 200 Å GaAs wells separated by a 200 Å wide AlxGa1-xAs barrier. Low-temperature ohmic contacts are made to both the electrons and holes, whose densities are individually adjustable between 1010/cm2 to greater than 1011/cm2. © 1994 American Institute of Physics.

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页码：3266 / 3268

页数：3

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